By Tony Chan Carusone, David A. Johns, Kenneth W. Martin
The 2d variation of Analog built-in Circuit Design makes a speciality of extra assurance approximately different types of circuits that experience elevated in value some time past decade. in addition, the textual content is better with fabric on CMOS IC gadget modeling, up to date processing structure and multiplied insurance to mirror technical suggestions. CMOS units and circuits have extra impression during this variation in addition to a discounted volume of textual content on BiCMOS and bipolar details. New chapters contain subject matters on frequency reaction of analog ICs and easy concept of suggestions amplifiers.
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Additional info for Analog Integrated Circuit Design (2nd Edition)
1 V, depending primarily on the doping concentration of the lightly doped side, the distance from the contacts to the junction, and the cross-sectional area of the junction. 44) I S is known as the scale current and is seen to be proportional to the area of the diode junction, A D, and inversely proportional to the doping concentrations. 6 Junction Capacitance of Forward-Biased Diode When a junction changes from reverse biased (with little current through it) to forward biased (with significant current flow across it), the charge being stored near and across the junction changes.
In Fig. 7 mA/V which translates to a value of 2 μ n C ox = 270 μA/V . 74) is derived without considering channel-length modulation. However, these values are very useful during design for quickly and roughly estimating the device sizes, currents and voltages required to obtain a desired g m. The second voltage-controlled current-source in Fig. 17, shown as g s v s , models the body effect on the small-signal drain current, id. When the source is connected to small-signal ground, or when its voltage does not change appreciably, then this current source can be ignored.
9(a), positive charge will be attracted to the channel – region. Since the substrate was originally doped p , this negative gate voltage has the effect of simply increasing + the channel doping to p , resulting in what is called an accumulated channel. The n+ source and drain regions are separated from the p+-channel region by depletion regions, resulting in the equivalent circuit of two back-to-back diodes. Thus, only leakage current will flow even if one of the source or drain voltages becomes large (unless the drain voltage becomes so large as to cause the transistor to break down).
Analog Integrated Circuit Design (2nd Edition) by Tony Chan Carusone, David A. Johns, Kenneth W. Martin